Patent · US Expired

Edge emission field emission device

US5804909A · kind A · utility

10Cited by
4References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 4, 1997
Grant dateSep 8, 1998
Priority date
Expiry dateApr 4, 2017

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2201/319
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

An edge emission FED (100) includes a supporting substrate (110); a cathode (120) disposed on the supporting substrate (110); a ballast layer (130) disposed on the cathode (120); an emissive layer (140) disposed on the ballast layer (130) and defining an emissive edge (183); a field shaper layer (150) disposed on the emissive layer (140); a dielectric layer (160) disposed on the field shaper layer (150); a gate extraction electrode (170) disposed on the dielectric layer (160); an emission well (180) defined by the ballast layer (130), the emissive edge (183), the field shaper layer (150), the dielectric layer (160), and the gate extraction electrode (170); and an anode plate (188) opposing the gate extraction electrode (170).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.