Nonvolatile semiconductor memory device having a sense amplifier coupled to memory cell strings with reduced number of selection transistors
US5805498A · kind A · utility
30Cited by
4References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 19, 1996 |
| Grant date | Sep 8, 1998 |
| Priority date | — |
| Expiry date | Sep 19, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device has one sense amplifier coupled to multiple bit lines and coupled to multiple memory cell strings to reduce the number of selection transistors per cell string and improve density. The invention is most useful in a NAND-type flash memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.