Semiconductor laser
US5805629A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 1996 |
| Grant date | Sep 8, 1998 |
| Priority date | — |
| Expiry date | Nov 12, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32391
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device includes a p type InP substrate with a (001) surface; a mesa structure formed by dry etching, extending along a <110> direction, including semiconductor layers, having (110) side surfaces, and a height H.sub.m ; and mesa burying layers including a p type InP burying layer on the (110) side surfaces and the (001) surface, the p type InP burying layer having a thickness D.sub.p, and an n type InP burying layer on the p type InP burying layer. An angle between a (111)B surface and (001) surface is .theta..sub.111, the growth rates on the (110) side surfaces and on the (001) surface are respectively R.sub.g (110) and R.sub.g (001), an angle .theta. is tan .theta.=R.sub.g (110)/R.sub.g (001) and the critical thickness D.sub.n of the n type InP burying layer on the (001) surface when the n type InP burying layer is not grown on the (111)B surface is ##EQU1## The n type InP burying layer has a thickness D.ltoreq.D.sub.n. The leakage current path width is narrowed and contact of the n type InP burying layer and an uppermost layer of the semiconductor layers is avoided. Consequently, a semiconductor device having reduced leakage current and superior device characteris…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.