Self-aligned transition from ridge to buried heterostructure waveguide, especially for multi-wavelength laser array integration
US5805755A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 1996 |
| Grant date | Sep 8, 1998 |
| Priority date | — |
| Expiry date | Jun 17, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4025
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An opto-electronic integrated circuit including an active ridge waveguide (60), for example, a semiconductor laser diode, and a passive buried heterostructure semiconductor waveguide (64). The two types of waveguides are chosen for their respective tasks so as to minimize the lasing wavelength dependencies arising from fabricational variations and to simultaneously reduce the allowable bending radius, thus reducing the chip size. The two waveguides are coupled by a transition structure (62) including a laterally undefined slab waveguide. A fabricational method is described that self-aligns the ridge and buried heterostructure waveguides so that the transition loss is negligible. The method can be integrated with the fabrication of a window facet (118', 118") between an end of the ridge waveguide and the chip edge, which prevents unintended back reflections from the chip edge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.