Sputtering titanium target assembly and producing method thereof
US5807443A · kind A · utility
13Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 27, 1996 |
| Grant date | Sep 15, 1998 |
| Priority date | — |
| Expiry date | Nov 27, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A cold-worked titanium material subjected to isostatic material and a backing plate are brought into contact with each other and subsequently hot-pressing. By such working the titanium material and the backing plate are bonded with each other by mutual diffusion and simultaneously the titanium material is recrystallized. The isostatic pressing is performed under a pressure of 50 to 200 MPa at a temperature of 300.degree. to 450.degree. C. The surface of the titanium material is preferably subjected to a surface roughening treatment to provide with a roughness level of 6S to 12S prior to the isostatic pressing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.