Monolithic semiconductor device having a microstructure and a transistor
US5808331A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 1997 |
| Grant date | Sep 15, 1998 |
| Priority date | — |
| Expiry date | Jul 16, 2017 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0742
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device (15) having a sensor (11) and a transistor (10) formed on a monolithic semiconductor substrate (16). The sensor (11) has a source region (41), a drain region (42), and a microstructure (12) which is formed from a conductive layer (28). The microstructure (12) modulates a channel region between the source and drain regions (41,42). The transistor has a gate structure, a portion of which is formed from the same conductive layer (28) used to form the microstructure (12). Anneal steps are performed on the conductive layer (28) to remove stress prior to the formation of source and drain regions (34,36) of the transistor (10). A self-test structure (14) is formed adjacent to the microstructure (12) which is used to calibrate and verify the operation of the sensor (11).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.