Semiconductor device structure which provides individually controllable body-terminal voltage of MOS transistors
US5808346A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 20, 1996 |
| Grant date | Sep 15, 1998 |
| Priority date | — |
| Expiry date | Dec 20, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
An N-type well region (NW) is provided on a P-type bulk silicon substrate (PS), and a channel region (PC) is provided inside the N-type well region (NW). The channel region is formed of a semiconductor layer having a polarity opposite to that of a source region (ST) and a drain region (DT). A contact hole (CHC) is provided in a gate oxide film (GO) located below a main portion (MP) close to an end portion (EP) of a gate electrode (GT). With this construction, a semiconductor device in which a body terminal is connected to a gate terminal for fast operation can remove restriction on location for connecting the body terminal and the gate terminal to achieve size-reduction and overcome disadvantages due to restriction on supply voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.