Interconnect structure and method of forming

US5808362A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Robert B. Davies · Tempe, US
• Andreas Wild · Weimar, DE
• Peter J. Zdebel · Mesa, US

Key dates

• Filing date: Feb 29, 1996
• Grant date: Sep 15, 1998
• Expiry date: Feb 29, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0217

Abstract

A graded-channel semiconductor device (10) is formed in a pedestal (12). The pedestal (12) is formed on a substrate (11) and improves the electrical characteristics of the device (10) compared to conventional device structures. The pedestal (12) has sides (13) that are bordered by a first dielectric layer (24) to provide electrical isolation. An interconnect structure (90) can be optionally formed in conjunction with the formation of the device (10). The interconnect structure (90) has a plurality of conductors (60,97) that can be used to transport electrical signals across the device (10).