Internal voltage generating circuit for semiconductor memory apparatus
US5808953A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1995 |
| Grant date | Sep 15, 1998 |
| Priority date | — |
| Expiry date | Nov 15, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/147
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An improved internal voltage generating circuit for a semiconductor memory apparatus capable of enhancing reliability and stability of a burn-in operation by providing the BEN and the BEX which have a certain hysteresis characteristic and capable of previously compensating a possible internal source voltage drop by increasing the level of internal source voltage by supplying a constant current to an external voltage through a driving transistor when a sense amplifying circuit which consume more voltage starts operating, which includes a first reference voltage generator for generating a bias reference voltage; a voltage level detector for detecting an external voltage at the time of a burn-in operation by receiving the output of the first reference voltage generator; a second reference voltage generator for generating a reference voltage which is obtained by amplifying a voltage level by a certain ratio; a standby differential amplifier for comparing the reference voltage outputted from the second reference voltage generator and an internal source voltage and for controlling a drive at the time of a standby; and an active differential amplifier for comparing the reference voltage o…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.