Semiconductor laser device and optical printing apparatus using the same
US5809053A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jul 3, 1996 |
| Grant date | Sep 15, 1998 |
| Priority date | — |
| Expiry date | Jul 3, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device is disclosed, in which two semiconductor layers of different conduction types are formed on a semiconductor substrate, an active semiconductor layer having a forbidden band width narrower than the two semiconductor layers is formed between the two semiconductor layers, and a waveguide encloses the light in a plane parallel to the active layer. The waveguide includes at least two regions of different widths. The wider one of the waveguide regions is located in the vicinity of the end surface of the semiconductor laser. A relation holds that .pi./6<L.times.(K.sub.0 -K.sub.2) <.pi..times.5/6, where L is the length of the wider waveguide region, and K.sub.0, K.sub.2 are propagation constants of the zeroth-order and second-order transverse modes, respectively, propagating in the waveguide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.