Oxidation method for removing fluorine gas inside polysilicon during semiconductor manufacturing to prevent delamination of subsequent layer induced by fluorine outgassing dielectric
US5811343A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 1996 |
| Grant date | Sep 22, 1998 |
| Priority date | — |
| Expiry date | Jul 15, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A method for manufacturing integrated circuit semiconductor device is provided for doping polysilicon formed on an N-well in a semiconductor substrate. Form a silicon oxide layer on the N-well. Then form a blanket polysilicon layer over the silicon oxide layer and pattern the polysilicon layer into a structure. Form a sacrificial oxide layer over the polysilicon structure. Then ion implant .sup.49 (BF.sub.2).sup.+ ions into the N-well and the polysilicon layer forming the source/drain regions and doping the polysilicon layer with P-type dopant thereby forming a doped polysilicon layer from the polysilicon layer. Then etch the sacrificial oxide layer away from the device. Form a polyoxide layer over the polysilicon structure. Then form a silicon oxide layer over the polyoxide layer followed by forming a glass layer thereover.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.