Control mechanisms for dosimetry control in ion implantation systems
US5811823A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 1996 |
| Grant date | Sep 22, 1998 |
| Priority date | — |
| Expiry date | Nov 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31705
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion source, an electrode assembly, a platform mounting a workpiece, and a ion beam measuring structure. The ion source in conjunction with the electrode assembly forms an ion beam in the shape of a ribbon beam. The ion beam is formed and directed such that a first portion of the ion beam treats the workpiece while a second portion of the ion beam is contemporaneously measured by the beam measuring structure. A controller obtains data from the beam measuring structure on the ion beam's parameters, and then generates control signals to the ion implantation system in response to the data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.