Semiconductor light-emitting devices
US5811839A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 1995 |
| Grant date | Sep 22, 1998 |
| Priority date | — |
| Expiry date | Aug 31, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3211
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 .mu.m to 100 .mu.m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.