High-power semiconductor module
US5811878A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1996 |
| Grant date | Sep 22, 1998 |
| Priority date | — |
| Expiry date | Jul 9, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a high-power semiconductor module (10), in which a plurality of first submodules (13, 14, 16, 17) are arranged in an electrically insulated manner in a common housing (12) and on a common cold plate (11) and are interconnected with one another, the first submodules (13, 14, 16, 17) each lacuna! individual controllable power semiconductor switches (13a), short-circuit-proof operation in conjunction with relatively high switching frequencies is made possible, with a relatively low current-carrying capacity and an increased withstand voltage, by virtue of the fact that the first submodules (13, 14, 16, 17) are connected in series within the module for the purpose of increasing the withstand voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.