Display unit
US5812231A · kind A · utility
Inventors
Key dates
| Filing date | Jun 19, 1995 |
| Grant date | Sep 22, 1998 |
| Priority date | — |
| Expiry date | Jun 19, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2310/0297
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A high-density impurity semiconductor region having the same conductivity type as a single-crystal silicon substrate is formed in addition to a main circuit portion of a peripheral circuit on the single-crystal silicon substrate. This semiconductor region is connected to a given potential point directly leading to an electric source. Alternatively, at a part of the peripheral drive circuit, a high-density impurity semiconductor region having a conductivity type reverse to that of the single-crystal silicon substrate is formed, and this semiconductor region is connected to a given potential point directly leading to an electric source. This can solve the problem that photocarriers (electrons and/or holes) caused by the light having not cut off and having entered into the single-crystal silicon region may enter into the peripheral drive circuit through the single-crystal silicon substrate to cause misoperation of the circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.