Radiation-emitting index-guided semiconductor diode
US5812578A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1995 |
| Grant date | Sep 22, 1998 |
| Priority date | — |
| Expiry date | Jun 16, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3215
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A radiation-emitting semiconductor diode, especially a laser having a first and a second cladding layer, an active layer and a mesa which comprises at least the second cladding layer and which lies recessed in a third cladding layer. The second cladding layer comprises a first sub-layer which adjoins the active layer and is comparatively thin, and a second sub-layer which adjoins the first sub-layer and is comparatively thick, while the refractive index of the first sub-layer is lower than that of the second sub-layer. Confinement in the thickness direction of charge carriers and radiation is good in such a diode, while the third cladding layer has a relatively high refractive index (giving a relatively low bandgap). Thus, the third cladding layer has a relatively low aluminium content, while providing good lateral confinement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.