Laser diode facet coating
US5812580A · kind A · utility
11Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 5, 1996 |
| Grant date | Sep 22, 1998 |
| Priority date | — |
| Expiry date | Nov 5, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/028
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A multi-layer high reflective dielectric optical coating deposited on a laser diode facet that shifts the high amplitude peak of the electric field associated with the reflection of light away from the interface between the semiconductor material and the reflective coating, and into the reflective coating itself. By shifting the electric field peak in this manner, the laser diode can operate at much higher optical output powers without inducing catastrophic optical damage at the non-output facet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.