Semiconductor PH sensor and circuit and method of making same
US5814280A · kind A · utility
11Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 1996 |
| Grant date | Sep 29, 1998 |
| Priority date | — |
| Expiry date | Nov 21, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A pH sensor having an ISFET is provided on a crystalline substrate of silicon with a thin film of aluminum oxide formed to have epitaxial growth with an overlaying thin film of silicon epitaxial grown on the aluminum oxide layer. A source element and a drain element are provided on the silicon film, and a pH responsive film layer is connected to the source and drain. The pH sensor can be accompanied with appropriate circuitry also integrally formed on the same epitaxial SOI substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.