Producing a sensor with doped microcrystalline silicon channel leads
US5814530A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1996 |
| Grant date | Sep 29, 1998 |
| Priority date | — |
| Expiry date | Sep 27, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/195
Abstract
In producing a sensor device with a sensing element and a thin film transistor, a semiconductor layer with microcrystalline silicon (.mu.c-Si) is produced in which semiconductor channel leads are formed. The .mu.c-Si has a structure that prevents formation of bubbles at the sides of the semiconductor layer during subsequent production of a sensing element in a silicon-based layer. The semiconductor layer can be a deposited doped layer of .mu.c-Si, or a layer of intrinsic .mu.c-Si can be doped. The .mu.c-Si layer can be deposited with a sufficiently small amount of hydrogen to prevent formation of bubbles; it can be deposited with crystalline grain structures permitting hydrogen to dissipate at a sufficient rate to prevent formation of bubbles; or its interfaces can be formed with sufficiently stability to prevent formation of bubbles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.