Method of manufacturing semiconductor laser
US5814532A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 29, 1997 |
| Grant date | Sep 29, 1998 |
| Priority date | — |
| Expiry date | Apr 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0202
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a method of manufacturing a semiconductor laser. A wafer having a substrate having a semiconductor layer including a light-emitting forming portion epitaxially grown on a surface of the substrate is broken into laser chips having a light-emitting surface at an end face thereof. When breaking the wafer into the chips, the breaking at the light-emitting surface is carried out by first forming street grooves in the substrate and thereafter cleaving the light-emitting layer forming portion. By doing so, there is no necessity of thinning the substrate to a required extent, facilitating handling during the manufacture process. A roughened surface of the street groove is provided in the substrate underlying the light-emitting layer forming portion, which is convenient for irregular reflection of a return light beam often encountered in an optical disc pickup device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.