Method for producing a bipolar semiconductor device having SiC-based epitaxial layer
US5814546A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 1, 1996 |
| Grant date | Sep 29, 1998 |
| Priority date | — |
| Expiry date | Nov 1, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a bipolar semiconductor device having a first layer doped according to a first doping type, the first layer being adapted to have minority charge carriers injected thereinto from a second layer of the device of a doping type opposite to that of the first layer in a forward conducting state of the device, comprises the steps of a) epitaxially growing the first layer and b) providing at least one region of the first layer with the minority charge carriers having a lifetime lower than in other parts of the first layer, the lower lifetime region of the first layer being formed directly during the epitaxial growth of this region by changing composition of substances fed to the first layer for the growth thereof when the region is grown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.