Incandescent light energy conversion with reduced infrared emission
US5814840A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jun 6, 1995 |
| Grant date | Sep 29, 1998 |
| Priority date | — |
| Expiry date | Jun 6, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01K1/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Energy conversion among heat or electricity and incandescent light is achieved, in the case of incandescent light emission, with the emission having reduced IR content, using a high band gap semiconductor element that is tailored in structure and in energy conversion physics to suppress free carrier absorption so as to be transparent or reflecting of photon energy that is below the band gap of the semiconductor and to only emit photon energy above the band gap of the semiconductor. A filament of lightly "N" doped 3C-SiC, at about 900 degrees C., will incandesce and radiate in the visible range for energies greater than about 2 eV and will exhibit inefficient emission of photons for energies less than about 2 eV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.