Semiconductor device having a shorter switching time with low forward voltage

US5814874A · kind A · utility

Assignee

• General Semiconductor Ireland · IE

Inventor

• Guenter Igel · Teningen, DE

Key dates

• Filing date: Jul 16, 1996
• Grant date: Sep 29, 1998
• Expiry date: Jul 16, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/60

Abstract

A semiconductor device having a semiconductor substrate and an epitaxial layer deposited thereon which supports a patterned insulating layer on which a metal layer is provided. To achieve a lower capacitance of the semiconductor device with unchanged forward voltage, the epitaxial layer consists of first and second epitaxial layers, the first epitaxial layer which adjoins the semiconductor substrate having a higher dopant concentration than and being of the same conductivity type as the second epitaxial layer.