Thick film copper metallization for microwave power transistor packages
US5814880A · kind A · utility
12Cited by
10References
44Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 29, 1993 |
| Grant date | Sep 29, 1998 |
| Priority date | — |
| Expiry date | Jan 29, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heat dissipating module and package for power microwave transistors and method of making same that includes a substrate having a thick copper layer bonded to a ceramic core which is thereto subjected to high processing temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.