Resonant tunneling diode structures for funtionally complete low-power logic
US5815008A · kind A · utility
21Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1997 |
| Grant date | Sep 29, 1998 |
| Priority date | — |
| Expiry date | Jun 5, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/221
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Negative-resistance resonant tunnel diodes (RTDs) perform a complete set of logic functions with a single basic configuration. Inputs feed through Schottky diodes to a transfer RTD coupled to a clocked latch having two RTDs in series. Cascaded gates are driven synchronously by multiple clock phases or by asynchronous event signals. An XOR configuration also provides logical inversion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.