Display device having a silicon substrate, a locos film formed on the substrate, a tensile stress film formed on the locos film, and TFTs formed on the tensile stress film
US5815223A · kind A · utility
133Cited by
10References
8Claims
0Family size
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Key dates
| Filing date | Sep 30, 1997 |
| Grant date | Sep 29, 1998 |
| Priority date | — |
| Expiry date | Sep 30, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/104
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A display device including a liquid crystal held between an active matrix substrate made up by arranging thin film transistors thereon, each using polycrystalline silicon as a semiconductor layer, in one-to-one relation to intersections between a plurality of signal lines and a plurality of scan lines, and an opposite substrate opposed to the active matrix substrate, wherein the active matrix substrate includes a film having tensile stress disposed at least below or above the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.