Method of forming a thin film of copper
US5817367A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1996 |
| Grant date | Oct 6, 1998 |
| Priority date | — |
| Expiry date | Dec 23, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a thin film of copper on a substrate includes a first step of conducting a chemical vapor deposition (CVD) process using a metal organic (MO) source while applying a first bias voltage to the surface of the substrate and a second step of conducting a chemical vapor deposition process using a metal organic source while applying a second bias voltage to the substrate, wherein the second bias voltage is opposite in polarity to the first bias voltage. The process may include a third step of conducting a chemical vapor deposition process using a metal organic source while applying a third bias voltage to the substrate, where the third bias voltage has the same polarity as the first bias voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.