Ferroelectric thin film device and method for making the same
US5817532A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1996 |
| Grant date | Oct 6, 1998 |
| Priority date | — |
| Expiry date | Apr 29, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02356
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There are disclosed a ferroelectric thin film device and a method for making the same. The ferroelectric thin film device includes a bottom electrode formed on a substrate, a ferroelectric thin film formed on the bottom electrode to contain a predetermined amount of Ta and have grains arranged in a regularly repeating pattern, and a top electrode formed on the ferroelectric thin film. The method for making a ferroelectric thin film includes the steps of forming a bottom electrode on a substrate, forming on the bottom electrode a Ta doped ferroelectric thin film, forming a top electrode on the ferroelectric thin film at regular intervals, and performing a rapid thermal annealing process on the ferroelectric thin film, using a radiant heating device, to induce crystallization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.