Method for integrating a localized bragg grating into a semiconductor
US5817537A · kind A · utility
4Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 24, 1996 |
| Grant date | Oct 6, 1998 |
| Priority date | — |
| Expiry date | Dec 24, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1231
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A Bragg grating is produced in a semiconductor component by wet etching through a resin mask developed after holographic exposure. This causes the regions of the grating at the boundary of other parts of the component to be etched more deeply. To compensate this, the method includes further irradiation through a second mask disposed at a distance from the part of the resin mask that defines the location of the grating. Applications include opto-electronic components.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.