Optoelectronic quantum well device having an optical resonant cavity and sustaining inter subband transitions
US5818066A · kind A · utility
67Cited by
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7Claims
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Key dates
| Filing date | Nov 18, 1996 |
| Grant date | Oct 6, 1998 |
| Priority date | — |
| Expiry date | Nov 18, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optoelectronic quantum well device comprises a stack of layers that have different gap widths and constitute quantum wells possessing, in the conduction band, at least two permitted energy levels, this stack of layers being included between two reflection means. The device also comprises a diffraction grating between one of the mirrors and the stack of layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.