Smooth switching thyristor
US5818074A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 1996 |
| Grant date | Oct 6, 1998 |
| Priority date | — |
| Expiry date | Jan 31, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/80
Abstract
A semiconductor thyristor has multiple different semiconductor layers with regions arranged in predetermined configurations to cause a plasma of carriers to flow in an expanding volume over a finite time to reach a full conduction condition, after the thyristor is switched into a conductive condition. A smooth current or connectivity transition occurs between a nonconductive state and a conductive state, thereby eliminating the typical, more instantaneous and discontinuous on-switching conductivity transitions. The finite and increased time to reach the full conduction inherently reduces the di/dt effect created by switching the thyristor. The reduced di/dt substantially reduces the radiated and conductive interference signals generated by switching the thyristor. The growth in the size of the plasma is controlled using configurations of the semiconductor structure and doping profiles within the semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.