Semiconductor integrated circuit device having a ceramic thin film capacitor
US5818079A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 1996 |
| Grant date | Oct 6, 1998 |
| Priority date | — |
| Expiry date | Jun 11, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
A ferroelectric capacitor comprising a lower electrode, a ceramic capacity film made of a ferroelectric substance and an upper electrode is provided on a substrate insulating film formed on a semiconductor substrate. A layer insulating film is formed on the semiconductor substrate so as to cover the ferroelectric capacitor. An electrode wiring is formed on the layer insulating film. A length L of the surface of the ceramic capacity film which is present between an intersection of the side of the upper electrode and the upper face of the ceramic capacity film and an intersection of the side of the ceramic capacity film and the upper face of the lower electrode and a thickness D of the ceramic capacity film have a relationship of L.gtoreq.2D.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.