Shield type magnetoresistive head arranged for weakening of a galvano-current magnetic field
US5818684A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 1996 |
| Grant date | Oct 6, 1998 |
| Priority date | — |
| Expiry date | Sep 11, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A shield type magnetoresistive head has a GMR element exhibiting a giant magentoresistance effect phenomenon due to a spin dependent scattering, and an electrode, the GMR element comprising upper and lower shield films, upper and lower gap insulation films, a magnetic field detecting layer in which a magnetization rotates by a signal magnetic field, a non-magnetic layer, a magnetization fixed layer in which the magnetization is substantially not moved by the signal magnetic field, and a bias film contacting to the magnetization fixed layer, wherein a distance from a film-thicknesswise center of the magnetic field detecting layer to a surface of the shield film contacting to the gap film including the magnetization fixed layer is set to be greater compared with that on a side of not including the magnetization fixed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.