Surface emitting semiconductor laser
US5818862A · kind A · utility
28Cited by
3References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 26, 1996 |
| Grant date | Oct 6, 1998 |
| Priority date | — |
| Expiry date | Dec 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18369
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
To improve the efficiency and to reduce the temperature rise of a surface emitting semiconductor laser, the laser includes between a buried active layer and a mirror, a current blocking layer incorporating an opening centered on the active layer and having dimensions less than those of the latter. Applications include optical telecommunication systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.