Plasma processing method and apparatus
US5820947A · kind A · utility
34Cited by
1References
32Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 19, 1997 |
| Grant date | Oct 13, 1998 |
| Priority date | — |
| Expiry date | Mar 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/466
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a vapor phase apparatus such as a plasma chemical vapor deposition (CVD) having a pair of electrodes, a surface of one of the electrodes has an uneven shape (concave portion and convex portion). An interval between the electrodes is 10 mm or less. A density of a convex portion is increased in a center portion of the electrode. An aspect ratio of the uneven shape is increased from a peripheral portion of the electrode to a center portion of the electrode. The aspect ratio represents a ratio (b/a) of a pitch (a) and a height (b) of the convex portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.