Patent · US Expired

Method of deposition

US5821017A · kind A · utility

10Cited by
8References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 18, 1995
Grant dateOct 13, 1998
Priority date—
Expiry dateAug 18, 2015

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/2043
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

There is described a method of chemically depositing a substance. The method is of utility in the direct manufacture of integrated circuits and in the manufacture of a photomask for use in production of integrated circuits. The method involves the use of a compound which degrades into a deposit and a residue when a radiant beam (e.g., a laser beam) or a particle beam (e.g., an electron beam) is applied. The residue and any unreacted compound may be washed off the substrate to which it has been applied. Nanoscale dimensions of the deposit can be achieved. A particularly suitable organometallic compound is tetra-sec butyl diaurum difluoride.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.