Method of manufacturing semiconductor wafers
US5821166A · kind A · utility
33Cited by
8References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1996 |
| Grant date | Oct 13, 1998 |
| Priority date | — |
| Expiry date | Dec 12, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
method of manufacturing semiconductor wafers, which can prevent the pendent surface phenomenon during the mirror polishing of the wafers and can enhance the flatness of the mirror polished surfaces. The method of manufacturing semiconductor wafers according to this invention includes slicing ingots into wafers, chamfering the peripheral edge portions of the wafers, lapping the sliced surfaces of the wafers, grinding the lapped surfaces of the wafers to form a gradual concave shape, mirror polishing the ground surfaces of the wafers, and finally cleaning the mirror polished wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.