Thin film deposition method and gas sensor made by the method
US5821402A · kind A · utility
17Cited by
11References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 1997 |
| Grant date | Oct 13, 1998 |
| Priority date | — |
| Expiry date | Mar 7, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C18/06
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A gas sensor including a substrate, a heater formed on said substrate, and a gas sensing material to be heated by said heater, wherein the area of the substrate under the heater is removed or reduced in its thickness to form a cavity. The thickness of the layer of the gas sensing material is reduced gradually toward the peripheral of the gas sensing material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.