High density read only memory cell configuration and method for its production

US5821591A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Wolfgang Krautschneider · Ottobrunn, DE
• Franz Hofmann · Munich, DE
• Wolfgang Roesner · Austin, US

Key dates

• Filing date: Feb 3, 1997
• Grant date: Oct 13, 1998
• Expiry date: Feb 3, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B20/00

Abstract

A memory cell configuration includes first memory cells with planar MOS transistors and second memory cells with vertical MOS transistors. The planar MOS transistors are disposed on the bottom of and on the crown of parallel, strip-like trenches. The vertical MOS transistors are disposed on the side walls of the trenches. The memory cell configuration can be produced with a mean area requirement for each memory cell of 1 F.sup.2, where F is the minimum structure size.