Semiconductor laser
US5822350A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1996 |
| Grant date | Oct 13, 1998 |
| Priority date | — |
| Expiry date | Sep 10, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser includes a ridge structure includes a cladding layer having a thermal expansion coefficient. Current blocking structures are disposed at both sides of the ridge structure and include Al.sub.x Ga.sub.1-x As first current blocking layers having an Al composition x larger than 0.7 and contacting the ridge structure. In this structure, even when the Al composition of the first current blocking layers is reduced at both sides of the ridge structure, the wavelength of light absorbed by the first current blocking layers does not exceed the wavelength of laser light produced in the active layer. Therefore, unwanted absorption of the laser light at both sides of the ridge structure is avoided, resulting in a semiconductor laser with improved laser characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.