Optical semiconductor apparatus, fabrication method thereof, modulation method therefor, light source apparatus and optical communication system using the same
US5822352A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 1997 |
| Grant date | Oct 13, 1998 |
| Priority date | — |
| Expiry date | Sep 17, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical semiconductor apparatus includes a single substrate, at least two semiconductor laser portions each having a semiconductor laser structure and a current injection unit for independently injecting currents into the at least two semiconductor laser portions. The semiconductor laser portions are serially arranged on the substrate in a light propagation direction and respectively includes waveguides having active layers, and layer-extending planes of the waveguides partially overlap and are not parallel to each other. The electric-field directions of TE modes in the respective semiconductor laser portions are parallel to the layer-extending planes of the waveguides, so that the non-parallel layer-extending planes of the waveguides can establish non-parallel TE modes in the respective semiconductor laser portions. In such an integrated optical semiconductor apparatus, such as an integrated semiconductor laser apparatus and an integrated semiconductor optical amplifier apparatus, the polarization mode dependency of gain can be controlled by unevenly injecting current into the semiconductor laser portions whose TE modes are not parallel to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.