Chemical vapor deposition using inductively coupled plasma and system therefor
US5824158A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 1997 |
| Grant date | Oct 20, 1998 |
| Priority date | — |
| Expiry date | Aug 27, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/507
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ICP (Inductively Coupled Plasma) system is used as a plasma generating means. A CVD process gas is introduced within a vacuum vessel from a gas inlet nozzle, and is then converted into plasma by a high frequency electric field induced within the vacuum vessel by an electromagnetic wave from an antenna. A sample can be located at a position not to be exposed to plasma, and a decomposed product material produced from the CVD process gas by the plasma is deposited on the surface of the sample mounted on a sample stage, thus forming a film. A dielectric viewing port, the antenna and the sample are disposed along the same axial direction such that the directions of the planes thereof correspond to each other, so that the film formation on the surface of the sample within the vacuum vessel can be observed through the transparent dielectric viewing port. When a CVD process gas of a CVD source gas mixed with a rare gas is introduced in the vacuum vessel and a bias voltage is applied to the sample, the film is formed by the CVD source gas and it is simultaneously planarized by sputter etching by the rare gas. When an antenna serving as a target material is disposed within the vacuum vess…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.