Optically transparent, electrically conductive semiconductor windows
US5824418A · kind A · utility
5Cited by
11References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 5, 1995 |
| Grant date | Oct 20, 1998 |
| Priority date | — |
| Expiry date | Sep 5, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/26
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor window which is transparent to light in the infrared range and which has good electrical conductivity is formed of a prefabricated semiconductor sheet bonded to a substrate material by optical contact. The sheet is a substantially uniformly doped wafer sufficiently thin that inherent absorption bands do not affect transmission. The sheet is contact bonded to the surface of an undoped transparent substrate without diffusion, growth or deposition on the surface. Windows having particular optical band pass characteristics are formed utilizing a zinc selenide substrate and a gallium arsenide sheet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.