Method of manufacturing sililcon-type charge transporting materials
US5824443A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 1996 |
| Grant date | Oct 20, 1998 |
| Priority date | — |
| Expiry date | Nov 4, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/062
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing solvent-soluble charge transporting materials capable of imparting charge-tranporting properties to polysiloxane resins. These materials have the formula A-R.sup.1 SiR.sup.2.sub.3-n Q.sub.n !.sub.p where A is a tertiary amine and organic group derived from a compound having charge transporting properties with an ionization potential of 4.5-6.2 eV; R.sup.1 is an alkylene group of 1-18 carbon atoms; R.sup.2 is a monovalent hydrocarbon group or a monovalent halogen-substituted hydrocarbon group of 1-15 carbon atoms; Q is a hydrolyzable group such as--OR.sup.3 where R.sup.3 is an alkyl group of 1-6 carbon atoms; n and p are each 1-3. This silicon-type charge transporting material is characterized by aromatic groups, and alkoxysilyl groups bonded via hydrocarbon groups onto the aromatic rings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.