Method of manufacturing thin film transistor
US5824572A · kind A · utility
11Cited by
12References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 1997 |
| Grant date | Oct 20, 1998 |
| Priority date | — |
| Expiry date | Mar 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6746
Abstract
A method of manufacturing a thin film transistor comprising the steps of: forming a gate electrode on the surface of a substrate; forming a gate insulation film covering the gate electrode; forming an active semiconductor layer and an ohmic contact layer on the gate insulation film; forming a source/drain electrode made of Cr; and removing a portion of the ohmic contact layer except for the portion in contact with the source/drain electrode by an etching solution, wherein the step of removing the ohmic contact layer is conducted in a state of at least partially or entirely peeling a resist on the source/drain electrode made of Cr.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.