Method of separating electronic elements

US5824595A · kind A · utility

Assignee

• Deutsche ITT Industries, GmbH · DE

Inventors

• Gunter Igel · Teningen, DE
• Martin Mall · Glückstadt, DE

Key dates

• Filing date: Oct 3, 1996
• Grant date: Oct 20, 1998
• Expiry date: Oct 3, 2016

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/977
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for separating elements associated within a body includes creating a separation region within the body, between the elements, leaving a region of the body which is to be thinned. The method then requires depositing a delay layer on the body, with an opening around the separation region. The delay layer has a predetermined removal rate relative to the removal rate of the body. Lastly, the method requires removing a predetermined amount of the delay layer, the separation region, and the region of the body to be thinned. Preferably, the removing is accomplished by etching, such as plasma etching, and the etch rate of the delay layer is lower than the etch rate for the separation region. In a preferred method, the predetermined removal rate and the positions of the openings in the delay layer are selected so that upon after etching, the elements remaining have a predetermined locus dependent thickness. Alternatively, the delay layers may be formed from the base material, formed from a metallic material or made from a silicon dioxide (SiO.sub.2) material. The base material is preferably a semiconductor wafer and the elements are semiconductor based electronic elements.