Large area uniform ion beam formation
US5825038A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 1996 |
| Grant date | Oct 20, 1998 |
| Priority date | — |
| Expiry date | Nov 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/083
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion chamber generating a stream of ions, a plasma electrode having an elongated slot with a high aspect ratio for shaping the stream of ions into a ribbon beam, and an electrode assembly for directing the stream of ions towards a workpiece. The plasma electrode can include a split extraction system having a plurality of elongated slots oriented substantially parallel to each other. The ion implantation system can also have a diffusing system for homogenizing the ion stream. Various exemplary diffusing systems include an apertured plate having an array of openings, diffusing magnets, diffusing electrodes, and dithering magnets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.