Semiconductor functional device and electronic circuit provided with the same
US5825048A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 21, 1996 |
| Grant date | Oct 20, 1998 |
| Priority date | — |
| Expiry date | Jun 21, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/881
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor functional device includes a semi-insulating semiconductor substrate; a resonant tunneling structure which includes, on the substrate, an n-type collector layer, an epitaxial multilayer structure including a double barrier structure constituted of a plurality of barrier layers holding a well layer therebetween, and an n-type emitter layer; an emitter electrode formed on the emitter layer; and a collector electrode formed on the collector layer. An undoped semiconductor barrier layer is interposed between the semi-insulating semiconductor substrate and the collector layer. With respect to a width of the emitter electrode, a thickness and an impurity concentration of the collector layer are selected such that the collector layer is pinched off when a potential difference generated between the emitter layer and the collector layer is equal to a valley voltage of I-V characteristics of the resonant tunneling structure constituted between the emitter layer and the collector layer while electrons travel from the emitter electrode toward the collector electrode through the emitter layer, the epitaxial multilayer structure and the collector layer. Consequently, the I-V char…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.