Resonant tunneling device with two-dimensional quantum well emitter and base layers
US5825049A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 1996 |
| Grant date | Oct 20, 1998 |
| Priority date | — |
| Expiry date | Oct 9, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/78
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A double electron layer tunneling device is presented. Electrons tunnel from a two dimensional emitter layer to a two dimensional tunneling layer and continue traveling to a collector at a lower voltage. The emitter layer is interrupted by an isolation etch, a depletion gate, or an ion implant to prevent electrons from traveling from the source along the emitter to the drain. The collector is similarly interrupted by a backgate, an isolation etch, or an ion implant. When the device is used as a transistor, a control gate is added to control the allowed energy states of the emitter layer. The tunnel gate may be recessed to change the operating range of the device and allow for integrated complementary devices. Methods of forming the device are also set forth, utilizing epoxy-bond and stop etch (EBASE), pre-growth implantation of the backgate or post-growth implantation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.