Three-terminal silicon synaptic device
US5825063A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 1996 |
| Grant date | Oct 20, 1998 |
| Priority date | — |
| Expiry date | Jul 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/685
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A three-terminal silicon MOS transistor with a time-varying transfer function is provided which may operate both as a single transistor analog learning device and as a single transistor non-volatile analog memory. The time-varying transfer function is achieved by adding or removing electrons from the fully insulated floating gate of an N-type MOS floating gate transistor. The transistor has a control gate capacitively coupled to the floating gate; it is from the perspective of this control gate that the transfer function of the transistor is modified. Electrons are removed from the floating gate via Fowler-Nordheim tunneling. Electrons are added to the floating gate via hot-electron injection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.